By Harald Gossner
Simulation tools for ESD security improvement appears on the integration of latest recommendations right into a entire improvement move, that is now to be had due advances made within the box through the contemporary years. those findings let for an early, solid ESD inspiration at a really early degree of the know-how improvement, that is crucial now improvement cycles were diminished. The ebook additionally bargains methods of accelerating the optimization and keep an eye on of the know-how bearing on functionality. therefore making the method more economical and more and more efficientThis identify offers a consultant throughout the newest study and know-how proposing the ESD safeguard improvement technique. this can be in accordance with a mix of approach, machine and circuit stimulation, and addresses the optimization of the serious factor, decreased improvement cycles.Written to handle the desires of the ESD engineer, this article is needed studying through all practitioners and researchers and scholars inside this box. the 1st huge evaluation with reference to ESD simulation· Addresses the severe factor of decreased improvement cycles, and gives recommendations· offers the most recent examine within the box with excessive sensible relevance and its effects
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Extra resources for Advanced simulation methods for ESD protection development
Conversely, any well contacts which are connected to the supply via a low ohmic path, tend to inhibit the triggering. 2. In a supply domain "x", the parasitic p+n diode in the P F E T and the n+p diode in the N F E T are commonly used to shunt positive ESD stress to VDDx (high supply potential) and negative ESD stress to VSSx (low supply potential), respectively. If the width of the junction is sufficient and the wells are connected directly to VDDx and VSSx (not the case in over-voltage tolerant pads, I2C pads, and so on), no further ESD protection measures are needed for these stress conditions.
This occurs especially for high ohmic resistors. 8. 6 • 10 -19 C the electronic charge, pn the mobility of electrons (pp the mobility for holes in analogy for ptype resistors) and L the distance between the resistor contacts. 22: High-current IV characteristic of an n well resistor. 52 Chapter 2. 8: General parameters of a resistor in the high-current regime. Parameter Explanation Rlow resistance at low current and room temperature differential resistance below the triggering point break down voltage of the resistor head trigger current and voltage current level that causes destruction of the protection element and corresponding voltage voltage drop across the resistor at IESD Rdiff Vbd Vtl, It1 It2, Vt2 ]/clamp from the resistor heads by inhomogeneous current flow or contact resistance is neglected.
ESREF (1996), 1746. , "A Simulation Analysis of QuarterMicron CMOS LSI Input Circuit Behaviour under CDM-ESD for Protection Device Improvement", Proc. 21st EOS/ESD Symposium (1999), 116. , "Extraction of Spatio-temporal Distribution of Power Dissipation in Semiconductor Devices Using Nanosecond Interferometric Mapping Technique", Appl. Phys. Lett. 81 (2002a), 2881. , "Single-Shot Thermal Energy Mapping of Semiconductor Devices With the Nanosecond Resolution Using Holographic Interferometry", IEEE Electr.
Advanced simulation methods for ESD protection development by Harald Gossner